The seminar on Ion Implantation provides an overview of equipment issues, process parameters and key quality control issues. Emphasis is placed on the advantages of ion implantation types of source elements used, selection of the proper ion species, maintenance of high vacuum on the implanter, beam focusing, scanning systems, and end point detection. Process issues related to silicon crystal orientation, channeling, trench processing, implant depth, metrology, and post implant annealing are included. Download the in-depth course description.
There are no prerequisites for this course.
Class attendance is an essential part of the education process and participants in TEEX courses are expected to attend all class sessions and field exercises. This course requires participants to attend a minimum of 80% of the class hours as a component of successful course completion. During the course, your instructor will review any additional attendance requirements, for example a field exercise that cannot be missed.
TopicsAnnealing methods +Implant depth +Implantation process +Introduction to ion implantation +Ion implantation equipment and sub assemblies +Masking +Material considerations +Process control +Scanning techniques +Source compounds
Suggested AudienceThose of all skill levels having an interest in an introduction to ion implantation processes.
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